Aluminum Plate Sputtering Targets High Purity For Semiconductor Industry

Aluminum Plate Sputtering Target (Al) High purity 99.999%

High purity aluminum ingots (99.995%) were used as raw materials to prepare large-scale high-purity aluminum plates with good surface and shape by hot rolling. The microstructure of high-purity aluminum plates annealed at different temperatures was studied. The results show that after annealing at 280 ℃ for 45 min and 55 min respectively, the as rolled aluminum sheet with 95% deformation can obtain the equiaxed structure with good grain size, and its average grain diameter is 62.4 μ m and 128.4 μ m respectively. The rolling deformation of the last pass has a decisive influence on the grain size of the product. The larger the deformation is, the smaller the grain is

Materials world provides high-purity materials from 4N to 7N: as the basic materials of semiconductor industry and electronic industry, high-purity materials are widely used in various industrial fields, including field luminescent covers, thermoelectronics, electronics, information, infrared, solar cells, high-performance alloys, etc. Jinxing matech supplies a full range of ultra-high purity materials to meet the needs of domestic and international customers. We not only provide high-purity raw materials, but also can make various high-purity raw materials for customers, such as ultra-high purity metal magnetron sputtering target, solar cell magnetron sputtering target, solar film evaporation coating material, electronic high-purity wire rod, strip, powder...

Sizes:

Plate sputtering targets:

Thickness: 0.04 to 1.40" (1.0 to 35mm).

Width up to 20"(50 to 500mm).

Length: 3.9" to 6.56 feet( 100-2000mm)

other sizes as requested.

Cylinder sputtering targets:

3.94 Dia. x 1.58"(100 Dia. x 40mm)

2.56 Dia. x 1.58" (65 Dia. x 40mm)

or 63*32mm other sizes as requested.

Tube sputtering targets:

2.76 OD x 0.28 WT x 39.4”L (70 OD x 7 WT x 1000mm L)

3.46 OD x 0.39 WT x 48.4”L (88 OD x 10 WT x 1230mm L)

other sizes as requested.