Aluminum Al Sputtering Target 99.999% Ultra High Purity For Integrated Circuits

Product Details:
Place of Origin: China
Brand Name: JINXING
Certification: ISO 9001
Model Number: Aluminum Sputtering Target
Payment & Shipping Terms:
Minimum Order Quantity: 1kg
Price: 10~500USD/kg
Packaging Details: Plywood case
Delivery Time: 10~25 work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union
Supply Ability: 100000kgs/M

Detail Information

Material: Aluminum Sputtering Target Process: CIP, HIP Pressing
Size: Customized Application: PVD Coating System
Shape: Round , Plate, Tube Grain Size: Fine Grain Size, Good Density
Purity:: 99.95%, 99.99%, 99.999% Density: 2.7g/cm3
High Light:

Aluminum Al Sputtering Target

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Sputtering Targets For Integrated Circuits

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Ultra High Purity Sputtering Targets

Product Description

Aluminum Sputtering Target (Al) High purity 99.999%

High purity material, ultra-high purity material, semiconductor high purity material


Materials world provides high-purity materials from 4N to 7N: as the basic materials of semiconductor industry and electronic industry, high-purity materials are widely used in various industrial fields, including field luminescent covers, thermoelectronics, electronics, information, infrared, solar cells, high-performance alloys, etc. Jinxing matech supplies a full range of ultra-high purity materials to meet the needs of domestic and international customers. We not only provide high-purity raw materials, but also can make various high-purity raw materials for customers, such as ultra-high purity metal magnetron sputtering target, solar cell magnetron sputtering target, solar film evaporation coating material, electronic high-purity wire rod, strip, powder...

 

 

Aluminum Sputtering Target 99.99% , Aluminum Sputtering Target 99.999% are available in varying sizes 

D101.6x3.175mm , D101.6x6.35mm etc

 

 

Another important use of ultra-high purity aluminum is as wiring for integrated circuits. The trace impurities of uranium and thorium in ultra-high purity aluminum are as few as possible, because they are radioactive elements, which release α particles at all times, resulting in the failure of integrated circuits and program errors and confusion. U + Th < 5ppb (wt%) in 5n2 high purity aluminum and U + Th < 1ppb (wt%) in 5n5 ultra high purity aluminum. < 5ppb (wt%), in 5n5 ultra-high purity aluminum

5N and 5n5 large-scale plate targets are widely used in PDP and TFT-LCD flat panel displays and sputtering targets for solar cell coating.


In the field of superconductivity, ultra-high purity aluminum is used as the stabilizing material of superconducting cable.

In the field of electronics, 5N ultrapure aluminum is used to manufacture optoelectronic storage media, such as CD, CD-ROM, CD-RW, data disk or micro disk, DVD silver disk, etc., in which 5N ultrapure aluminum sputtering film is used as the light reflecting layer.


The impurity content of ultra pure aluminum is very little.

The low impurity content makes the ultra pure aluminum have some special properties.


The lower the content of impurity elements, the smaller the density of intermetallic compounds.


Use as a good conductor of electricity


The resistance in the very low temperature region is very small


High reflectivity to UV


Design freedom spread


It is highly resistant to corrosive gases and solutions

 

Product Name Element Purirty Melting Point Density (g/cc) Available Shapes
High Pure Sliver Ag 4N-5N 961 10.49 Wire, Sheet, Particle, Target
High Pure Aluminum Al 4N-6N 660 2.7 Wire, Sheet, Particle, Target
High Pure Gold Au 4N-5N 1062 19.32 Wire, Sheet, Particle, Target
High Pure Bismuth Bi 5N-6N 271.4 9.79 Particle, Target
High Pure Cadmium Cd 5N-7N 321.1 8.65 Particle, Target
High Pure Cobalt Co 4N 1495 8.9 Particle, Target
High Pure Chromium Cr 3N-4N 1890 7.2 Particle, Target
High Pure Copper Cu 3N-6N 1083 8.92 Wire, Sheet, Particle, Target
High Pure Ferro Fe 3N-4N 1535 7.86 Particle, Target
High Pure Germanium Ge 5N-6N 937 5.35 Particle, Target
High Pure Indium In 5N-6N 157 7.3 Particle, Target
High Pure Magnesium Mg 4N 651 1.74 Wire, Particle, Target
High Pure Magnesium Mn 3N 1244 7.2 Wire, Particle, Target
High Pure Molybdenum Mo 4N 2617 10.22 Wire, Sheet, Particle, Target
High Pure Niobium Nb 4N 2468 8.55 Wire, Target
High Pure Nickel Ni 3N-5N 1453 8.9 Wire, Sheet, Particle, Target
High Pure Lead Pb 4N-6N 328 11.34 Particle, Target
High Pure Palladium Pd 3N-4N 1555 12.02 Wire, Sheet, Particle, Target
High Pure Platinum Pt 3N-4N 1774 21.5 Wire, Sheet, Particle, Target
High Pure Silicon Si 5N-7N 1410 2.42 Particle, Target
High Pure Tin Sn 5N-6N 232 7.75 Wire, Particle, Target
High Pure Tantalum Ta 4N 2996 16.6 Wire, Sheet, Particle, Target
High Pure Tellurium Te 4N-6N 425 6.25 Particle, Target
High Pure Titanium Ti 4N-5N 1675 4.5 Wire, Particle, Target
High Pure Tungsten W 3N5-4N 3410 19.3 Wire, Sheet, Particle, Target
High Pure Zinc Zn 4N-6N 419 7.14 Wire, Sheet, Particle, Target
High Pure Zirconium Zr 4N 1477 6.4 Wire, Sheet, Particle, Target

 

 

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