High Purity 99.5% Titanium Sputtering Target For Pvd Coating System

Product Details:
Place of Origin: China
Brand Name: JINXING
Certification: ISO 9001
Model Number: Titanium Sputtering Target
Payment & Shipping Terms:
Minimum Order Quantity: 1kg
Price: 20~200USD/kg
Packaging Details: Plywood case
Delivery Time: 10~25 work days
Payment Terms: L/C, D/A, D/P, T/T, Western Union
Supply Ability: 100000kgs/M

Detail Information

Material: Titanium Sputtering Target Process: CIP, HIP Pressing
Size: Customized Application: PVD Coating System
Shape: Round , Plate, Tube Grain Size: Fine Grain Size, Good Density
Purity:: 99.5%, 99。95% Density: 4.52g/cm3
High Light:

metal sputtering targets

,

tungsten sputtering target

Product Description

Titanium Sputtering Target 99.5%, 99.95% D100x40mm , D65x6.35mm

Purity is the main performance index of the target material, because the purity of the target material has a great influence on the performance of the film.


Main performance requirements of target material:


Purity is the main performance index of the target material, because the purity of the target material has a great influence on the performance of the film. However, in practical application, the purity requirements of the target are not the same. For example, with the rapid development of microelectronics industry, the size of silicon chip has been developed from 6 ", 8" to 12 ", while the wiring width has been reduced from 0.5um to 0.25um, 0.18um or even 0.13um. Previously, 99.995% of the target purity can meet the process requirements of 0.35um IC, while the preparation of 0.18um line requires 99.999% or even 99.9999% of the target purity.

 

Impurities in the target solid and oxygen and water vapor in the pores are the main pollution sources. Different target materials have different requirements for different impurity content. For example, pure aluminum and aluminum alloy targets for semiconductor industry have different requirements for alkali metal content and radioactive element content.


In order to reduce the porosity in the target solid and improve the properties of sputtered films, the target is usually required to have a high density. The density of the target not only affects the sputtering rate, but also affects the electrical and optical properties of the film. The higher the target density is, the better the film performance is. In addition, increasing the density and strength of the target can make the target better withstand the thermal stress in the sputtering process. Density is also the key performance index of the target.


Generally, the target material is polycrystalline structure, and the grain size can be from micrometer to millimeter. For the same kind of target, the sputtering rate of the target with small grain size is faster than that of the target with large grain size, while the thickness distribution of the film deposited by the target with small grain size difference (uniform distribution) is more uniform.

 

Titanium Sputtering Target  , Titanium Sputtering Target 99.95%

are available in varying sizes 

D100x40mm , D65x6.35mm etc

 

Product Name Element Purirty Melting Point Density (g/cc) Available Shapes
High Pure Sliver Ag 4N-5N 961 10.49 Wire, Sheet, Particle, Target
High Pure Aluminum Al 4N-6N 660 2.7 Wire, Sheet, Particle, Target
High Pure Gold Au 4N-5N 1062 19.32 Wire, Sheet, Particle, Target
High Pure Bismuth Bi 5N-6N 271.4 9.79 Particle, Target
High Pure Cadmium Cd 5N-7N 321.1 8.65 Particle, Target
High Pure Cobalt Co 4N 1495 8.9 Particle, Target
High Pure Chromium Cr 3N-4N 1890 7.2 Particle, Target
High Pure Copper Cu 3N-6N 1083 8.92 Wire, Sheet, Particle, Target
High Pure Ferro Fe 3N-4N 1535 7.86 Particle, Target
High Pure Germanium Ge 5N-6N 937 5.35 Particle, Target
High Pure Indium In 5N-6N 157 7.3 Particle, Target
High Pure Magnesium Mg 4N 651 1.74 Wire, Particle, Target
High Pure Magnesium Mn 3N 1244 7.2 Wire, Particle, Target
High Pure Molybdenum Mo 4N 2617 10.22 Wire, Sheet, Particle, Target
High Pure Niobium Nb 4N 2468 8.55 Wire, Target
High Pure Nickel Ni 3N-5N 1453 8.9 Wire, Sheet, Particle, Target
High Pure Lead Pb 4N-6N 328 11.34 Particle, Target
High Pure Palladium Pd 3N-4N 1555 12.02 Wire, Sheet, Particle, Target
High Pure Platinum Pt 3N-4N 1774 21.5 Wire, Sheet, Particle, Target
High Pure Silicon Si 5N-7N 1410 2.42 Particle, Target
High Pure Tin Sn 5N-6N 232 7.75 Wire, Particle, Target
High Pure Tantalum Ta 4N 2996 16.6 Wire, Sheet, Particle, Target
High Pure Tellurium Te 4N-6N 425 6.25 Particle, Target
High Pure Titanium Ti 4N-5N 1675 4.5 Wire, Particle, Target
High Pure Tungsten W 3N5-4N 3410 19.3 Wire, Sheet, Particle, Target
High Pure Zinc Zn 4N-6N 419 7.14 Wire, Sheet, Particle, Target
High Pure Zirconium Zr 4N 1477 6.4 Wire, Sheet, Particle, Target

 

 

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