​High Purity Mo Ion Implanting Products For Semiconductor Application

Product Description

​High Purity W,Mo Ion Implanting Products for semiconductor Application

application

During ion implantation, the conversion of the ion source into plasma ions will produce a working temperature of more than 2000 ℃, and when the ion beam erupts, it will also produce a lot of ion kinetic energy, and the general metal will soon be burned. Therefore, inert metals with relatively large mass and density are needed to maintain the direction of ion beam eruption and increase the durability of components. Tungsten materials have the advantages of stable high-temperature chemical properties, small thermal denaturation and long service life, and have become the first choice of ion sources and consumables for ion implanters in the semiconductor industry. The shielding cylinder of the emission cathode, the emission panel, the central fixed rod, the wire electrode plate in the arc starting chamber, etc. are collectively referred to as ion implanted tungsten parts