
Tungsten W Foil Tape
Product Details:
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Place of Origin: | CHINA |
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Brand Name: | JINXING |
Certification: | ISO 9001 |
Model Number: | W1 - Tungsten Implanted Ion Parts |
Payment & Shipping Terms:
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Minimum Order Quantity: | 10 kg |
Price: | Negotiable |
Packaging Details: | plywood cases |
Delivery Time: | 15-20 days |
Payment Terms: | L/C, T/T, D/P, Western Union |
Supply Ability: | 2000 kg per month |
Detail Information |
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Product Name: | Tungsten Implanted Ion Parts | Type: | W1 |
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Density: | 19.1 G/cc | Purity: | >99.95% |
Tensile Strength: | >175 MPa | Elongation: | <12% |
Standard: | ASTM B760 | Application: | Injection Mold |
Highlight: | Tungsten Implanted Ion Parts,99.95% Implanted Ion Parts,Implanted Ion Parts For Injection Mold |
Product Description
Tungsten Implanted Ion Parts are a low-temperature process through which the ions of an element are accelerated into a solid target, thereby changing the physical, chemical or electrical properties of the target. Ion implantation is used in semiconductor device manufacturing, metal surface treatment and material science research. If the ion stops and remains in the target, the ion will change the elemental composition of the target (if the ion is different from the composition of the target). When ions hit the target with high energy, ion implantation will also cause chemical and physical changes.
SPECIFICATION & CHEMICAL COMPOSITIONS (NOMINALS)
Material | Type | Chemical Composition (by wt.) |
Pure Tungsten | W1 | >99.95%min. Mo |
Tungsten Copper Alloy | WCu | 10%~50% Cu / 50%~90% W |
Tungten Heavy Alloy | WNiFe | 1.5 % - 10 % Ni, Fe, Mo |
Tungten Heavy Alloy | WNiCu | 5 % - 9.8 % Ni, Cu |
Tungsten Rhenium | WRe | 5,0 % Re |
Moly Tungsten | MoW50 | 0,0 % W |
Tungsten Implanted Ion Parts is a new generation of high technology for material surface treatment. It uses a series of physical and chemical
changes caused by the ion beam of a metal element with high energy into solid materials to improve some surface properties of solid
materials.
The results show that metal ion implantation is more effective and widely used in the research and application of ion implantation surface
modification of non semiconductor materials. Many nitrogen ion implantation can not be realized, and metal ion implantation can be well
realized. However, for the traditional ion implanter based on the needs of semiconductor ion implantation, it is difficult to obtain a
relatively strong metal ion beam, and the cost of ion implantation surface modification of non semiconductor materials is also relatively
expensive.
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